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2N7091
MECHANICAL DATA Dimensions in mm(inches)
4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045)
10.41 (0.410) 10.67 (0.420)
P-CHANNEL ENHANCEMENT MODE TRANSISTOR
16.38 (0.645) 16.89 (0.665)
13.38 (0.527) 13.64 (0.537)
3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430)
123
12.07 (0.500) 19.05 (0.750)
V(BR)DSS ID(A) RDS(on)
0.64 (0.025) Dia. 0.89 (0.035)
-100V -14A W 0.20W
2.54 (0.100) BSC
3.05 (0.120) BSC
FEATURES
* TO257AB HERMETIC PACKAGE FOR HIGH RELIABILITY APPLICATIONS * SCREENING OPTIONS AVAILBLE
TO-257AB Metal Package
Pin 1 - Gate Pin 2 - Drain Pin 3 - Source
* SIMPLE DRIVE REQUIREMENTS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
VDS VGS ID IDM PD TJ , Tstg TL Drain - Source Voltage Gate - Source Voltage Continuous Drain Current (TJ = 150C) Pulsed Drain Current Power Dissipation TC = 25C TC = 100C Operating Junction and Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.) TC = 25C TC = 100C - 100V 20V -14A -8.7A 56A 70W 27W -55 to 150C 300C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 2653 Issue 1
2N7091
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated)
Parameter Test Conditions
ID = -250A ID = -250A VGS = 20V TJ = 125C VGS = -10V TJ = 125C IDS = -8.7A 5.0 1300 750 310 50 ID = -14A ID = -14A 10 27 10 50 40 40 62 15 35 30 80 80 60 -14 -56 IF = -14A IF = -14A di/dt = 100A/s VGS = 0 150 0.3 -2 300 ns nC pF -14 0.15 2.3 0.20 0.32
Min.
-100 -2
Typ.
Max.
Unit
V
STATIC ELECTRICAL RATINGS V(BR)DSS Drain-Source Breakdown Voltage VGS = 0 VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr
1 Pulse
Gate Threshold Voltage Gate - Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain - Source On-State Resistance
1
VDS = VGS VDS = 0 VDS = -80V VGS = 0 VDS = -10V VGS = -10V ID = 8.7A VDS = -15V VGS = 0 VDS = 25V f = 1MHz VDS = -50 VGS = -10V VDD = -50V VGEN =-10V RL = 3.5W RG = 4.7W
-4 100 -25 -250
V nA A A
W
S
Forward Transconductance1 DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Gate Drain Rise Time2 Time2 Charge2 Charge2 Time2 Charge2 Gate Source
Turn-On Delay Turn-Off Delay Fall Time2
SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Diode Forward Voltage1 Reverse Recovery Time Reverse Recovery Charge A V ns C
2 Independent
test : Pulse Width < 300ms ,Duty Cycle < 2% of Operating Temperature
THERMAL RESISTANCECHARACTERISTICS Parameter
RthJC RthJA RthCS Thermal resistance Junction-Case Thermal resistance Junction-ambient Thermal resistance Case to Sink 1.0
Min.
Typ.
Max.
1.8 80
Unit
C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 2653 Issue 1

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